Tuesday, November 26, 2019

Electronics Devices and Circuits


ELECTRONIC DEVICES AND CIRCUITS


MATERIALS, SEMICONDUCTORS   (click here)

OPEN-CIRCUITED PN DIODE

FORWARD AND REVERSE BIASED PN DIODE

LOAD LINE ANALYSIS

STATIC AND DYNAMIC RESISTANCE OF A DIODE

DIODE CURRENT AND CALCULATING DYNAMIC RESISTANCE OF A DIODE

TRANSITION AND DIFFUSION CAPACITANCE

DIODE SWITCHING TIMINGS

HALF-WAVE RECTIFIER OPERATION

FULL WAVE RECTIFIER OPERATION

BRIDGE FULLWAVE RECTIFIER OPERATION

RECTIFIERS PROBELMS

RECTIFIERS WITH CAPACITIVE FILTER

CLIPPERS-CLIPPING AT TWO INDEPENDENT LEVELS

CLAMPERS - POSITIVE AND NEGATIVE CLAMPER,

CLAMPERS - BIASED POSITIVE CLAMPERS WITH POSITIVE AND NEGATIVE REFERENCE VOLTAGES

PRINCIPLE OF OPERATION OF BJT

CURRENT COMPONENTS IN A TRANSISTOR

COMMON BASE INPUT OUTPUT CHARACTERISTICS

COMMON EMITTER INPUT OUTPUT CHARACTERISTICS

COMMON COLLECTOR INPUT OUTPUT CHARACTERISTICS

NEED FOR BIASING

DC LOAD LINE AND Q POINT

AC LOAD LINE

STABILITY FACTOR

FIXED BIAS

FIXED BIAS WITH EMITTER RESISTANCE

COLLECTOR TO BASE BIAS

COLLECTOR - EMITTER BIAS

SELF BIAS / VOLTAGE DIVIDER BIAS / UNIVERSAL BIAS

BIAS COMPENSATION TECHNIQUES

THERMAL STABILITY

LOW FREQUENCY MODEL OR H-PARAMETER MODEL OF A TRANSISTOR

DETERMINATION OF H-PARAMETERS FROM CHARACTERISTICS

ANALYSIS OF H-PARAMETER MODEL OF A TRANSISTOR

H-PARAMETER MODEL EXACT AND APPROXIMATE ANALYSIS

CE AMPLIFIER WITH AN EMITTER RESISTOR

LOW FREQUENCY RESPONSE OF BJT AMPLIFIERS

FET CONSTRUCTION AND OPERATION

FET PARAMETERS

MOSFET OPERATION : CONSTRUCTION AND OPERATION OF N-CH DEPLETION MOSFETS

MOSFET OPERATION : CONSTRUCTION AND OPERATION OF N-CH ENHANCEMENT MOSFETS

BIASING THE FETS

CS AMPLIFIER ANALYSIS

CD AMPLIFIER ANALYSIS

CG AMPLIFIER ANALYSIS

GENERALIZED FET

TUNNEL DIODE

VARACTOR DIODE

ZENER DIODE OPERATION, CHARACTERISTICS

ZENER DIODE AS VOLTAGE REGULATOR

OPERATION AND CHARACTERISTICS OF SCR

UNI JUNCTION TRANSISTOR CONSTRUCTION



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